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MIXING DIFFERENT RANDOM DEPOSITIONS IN NONEQUILIBRIUM SURFACE GROWTH MODELS

M. A. Novotny () and A. Kolakowska ()
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M. A. Novotny: Department of Physics and Astronomy, P. O. Box 5167, Mississippi State University, Mississippi State, Mississippi, 39762-5167, United States of America;
A. Kolakowska: Department of Physics and Astronomy, P. O. Box 5167, Mississippi State University, Mississippi State, Mississippi, 39762-5167, United States of America;

International Journal of Modern Physics C (IJMPC), 2009, vol. 20, issue 09, 1377-1385

Abstract: An exact solution is presented for mixing two or more different types of Random Deposition (RD) nonequilibrium surface growth processes. The depositions may be made in a sequential mode, or in a random mode by first randomly choosing the lattice site for deposition. The results hold in all dimensionsd. Simulations are presented ind = 1for comparison. Furthermore, a mean-field type of approach to mixing RD with other surface growth processes is tested against the exact solution.

Keywords: Random deposition; nonequilibrium surface growth; exact solution; 68.35.Ja; 68.35.Bs; 68.35.Fx; 68.35.Rh (search for similar items in EconPapers)
Date: 2009
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DOI: 10.1142/S0129183109014448

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