Enhanced ferromagnetic properties ofCudoped two-dimensionalGaNmonolayer

Fayyaz Hussain (), Y. Q. Cai, M. Junaid Iqbal Khan, Muhammad Imran, Muhammad Rashid, Hafeez Ullah, Ejaz Ahmad, Farhana Kousar and S. A. Ahmad
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Fayyaz Hussain: Department of Physics, Bahauddin Zakariya University Multan 60800, Pakistan
Y. Q. Cai: Institute of High Performance Computing, 1 Fusionopolis Way 138632, Singapore
M. Junaid Iqbal Khan: Department of Physics, Bahauddin Zakariya University Multan 60800, Pakistan
Muhammad Imran: Department of Physics, Simulation Laboratory, The Islamia University of Bahawalpur 63100, Pakistan
Muhammad Rashid: Department of Physics, COMSATS Institute of Information Technology, 44000 Islamabad, Pakistan
Hafeez Ullah: Department of Physics, Bahauddin Zakariya University Multan 60800, Pakistan
Ejaz Ahmad: Department of Physics, Bahauddin Zakariya University Multan 60800, Pakistan
Farhana Kousar: Department of Chemistry, The Islamia University of Bahawalpur 63100, Pakistan
S. A. Ahmad: Department of Physics, Simulation Laboratory, The Islamia University of Bahawalpur 63100, Pakistan

International Journal of Modern Physics C (IJMPC), 2015, vol. 26, issue 01, 1-8

Abstract: We demonstrate enhanced ferromagnetism in copper doped two-dimensionalGaNmonolayer (GaN-ML). Our first principle calculation based on density functional theory predicted that nonmagneticCu-dopant with concentration of 6.25% to be ferromagnetic (FM) in 2DGaNlayer which carries a magnetic moment of 2.0μBperCuatom and it is found to be long range magnetic coupling among theCu-dopant. The Cu-dopant in 2DGaN-ML which can be explained in terms ofp-dhybridization at Curie temperature and this dopant prefer the FM behavior in 2DGaNlayer. HenceCudoped 2DGaNlayer shows strong magnetic properties so that it is a promising material in the field of spintronics.

Keywords: Ferromagnetism; hybridization; GaNmonolayer; 70; 75; 75.30-m; 75.30.kz (search for similar items in EconPapers)
Date: 2015
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DOI: 10.1142/S0129183115500096

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