Spin polarization in monolayer MoS2 in the presence of proximity-induced interactions

X. N. Zhao, W. Xu, Y. M. Xiao () and B. Van Duppen ()
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X. N. Zhao: Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, HFIPS, Hefei 230031, P. R. China†Chinese University of Science and Technology, Hefei 230026, P. R. China
W. Xu: Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, HFIPS, Hefei 230031, P. R. China‡School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information, Yunnan University, Kunming 650091, P. R. China
Y. M. Xiao: #x2021;School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information, Yunnan University, Kunming 650091, P. R. China
B. Van Duppen: #xA7;Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium

International Journal of Modern Physics C (IJMPC), 2020, vol. 31, issue 10, 1-10

Abstract: When monolayer (ML) MoS2 is placed on a substrate, the proximity-induced interactions such as the Rashba spin-orbit coupling (RSOC) and exchange interaction (EI) can be introduced. Thus, the electronic system can behave like a spintronic device. In this study, we present a theoretical study on how the presence of the RSCO and EI can lead to the band splitting, the lifting of the valley degeneracy and to the spin polarization in n- and p-type ML MoS2. We find that the maxima of the in-plane spin orientation in the conduction and valence bands in ML MoS2 depend on the Rashba parameter and the effective Zeeman field factor. At a fixed Rashba parameter, the minima of the split conduction band and the maxima of the split valence band along with the spin polarization in ML MoS2 can be tuned effectively by varying the effective Zeeman field factor. On the basis that the EI can be induced by placing the ML MoS2 on a ferromagnetic substrate or by magnetic doping in ML MoS2, we predict that the interesting spintronic effects can be observed in n- and p-type ML MoS2. This work can be helpful to gain an in-depth understanding of the basic physical properties of ML MoS2 for application in advanced electronic and optoelectronic devices.

Keywords: Monolayer MoS2; Rashba spin-orbit coupling; exchange interaction; spin polarization (search for similar items in EconPapers)
Date: 2020
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DOI: 10.1142/S0129183120501430

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