Simulation of photon-generated carrier transport characteristics in CdSe quantum dot thin films

Fuzhong Zheng, Hongbing Zhu, Yong Huang, Xiaozhao Jin, Danping Huang, Ying Wu and Jiajia Liu
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Fuzhong Zheng: School of Automation, Chengdu University of Information Technology, Chengdu 610225, China†College of Mechanical Engineering, Sichuan University of Science and Engineering, Zigong 643000, China
Hongbing Zhu: School of Automation, Chengdu University of Information Technology, Chengdu 610225, China
Yong Huang: ��College of Mechanical Engineering, Sichuan University of Science and Engineering, Zigong 643000, China
Xiaozhao Jin: School of Automation, Chengdu University of Information Technology, Chengdu 610225, China
Danping Huang: ��College of Mechanical Engineering, Sichuan University of Science and Engineering, Zigong 643000, China
Ying Wu: ��School of Intelligent Technology and Engineering, Chongqing University of Science and Technology, Chongqing 401331, China
Jiajia Liu: School of Automation, Chengdu University of Information Technology, Chengdu 610225, China

International Journal of Modern Physics C (IJMPC), 2023, vol. 34, issue 12, 1-13

Abstract: Studying the transport characteristics of carriers in quantum dot (QD) film provides theory support for the structure design and performance improvement of QD film device. However, time of flight experiment can only test the global optoelectric current signal brought by the carrier transport, and cannot analyze the carrier transport in the transport layer. Here, the hopping transport model of photogenerated carriers in QD films was established to study the expansion and drift movement of carriers in the PDE module of COMSOL. According to the material properties of the actual QD films, the carrier transport in single-size QD films was studied.

Keywords: Quantum dot; PDE module; hopping model; TOF (search for similar items in EconPapers)
Date: 2023
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DOI: 10.1142/S012918312350167X

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