STRUCTURAL AND ELECTRICAL STABILITY OF METAL CONTACTS TO MBE GROWN CdTeLAYERS
P. Devine,
G.W. Matthews,
D. Sands,
C.G. Scott,
M. Yousaf,
C.J. Blomfield,
I.M. Dharmadasa and
G.C. Gregory
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P. Devine: Department of Applied Physics, University of Hull, Hull HU6 7RX, UK
G.W. Matthews: Department of Applied Physics, University of Hull, Hull HU6 7RX, UK
D. Sands: Department of Applied Physics, University of Hull, Hull HU6 7RX, UK
C.G. Scott: Department of Applied Physics, University of Hull, Hull HU6 7RX, UK
M. Yousaf: Department of Applied Physics, University of Hull, Hull HU6 7RX, UK
C.J. Blomfield: Applied Physics Division, Sheffield Hallam University, Sheffield S1 1WB, UK
I.M. Dharmadasa: Applied Physics Division, Sheffield Hallam University, Sheffield S1 1WB, UK
G.C. Gregory: Applied Physics Division, Sheffield Hallam University, Sheffield S1 1WB, UK
Surface Review and Letters (SRL), 1994, vol. 01, issue 04, 669-672
Abstract:
The properties of ohmic and rectifying contacts to CdTe epilayers have been studied with a view to establishing a contacting technology with sufficient reliability and stability for use in the fabrication of a variety of CdTe-based devices involving single and multilayer structures grown by MBE. In the case ofn-type CdTe layers, evaporated gold has been found to yield Schottky barriers with initial height in excess of 0.9 eV but re-examination after a period of a few weeks at room temperature (or a much shorter time at elevated temperatures) has revealed a significant decline in the barrier height. Associated changes in the electrical properties of the semiconductor layers in the vicinity of the contact interface have been explored usingC-Vdepth profiling measurements and these have been correlated with changes in the chemical structure observed by means of SIMS imaging techniques. In particular, a significant reduction in the uncompensated shallow donor density just below the metal-semiconductor interface has been found to be accompanied by an out diffusion of Te and Cd to the surface of the metal contact.
Date: 1994
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DOI: 10.1142/S0218625X94000904
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