PHOTOLUMINESCENCE STUDIES OF GaInArSbHIGHLY DOPED WITH TELLURIUM GROWN BY LIQUID PHASE EPITAXY ON (100) GaSb
J. Díaz-Reyes (),
E. Corona-Organiche,
J. L. Herrera-Pérez,
O. Zarate-Corona and
J. Mendoza-Alvarez
Additional contact information
J. Díaz-Reyes: CICATA-IPN, Unidad Puebla, Acatlán 63, Col. La Paz, Puebla, Puebla 72160, Mexico
E. Corona-Organiche: CICATA-IPN, Unidad Puebla, Acatlán 63, Col. La Paz, Puebla, Puebla 72160, Mexico
J. L. Herrera-Pérez: CICATA-IPN, Unidad Puebla, Acatlán 63, Col. La Paz, Puebla, Puebla 72160, Mexico
O. Zarate-Corona: CIDS-BUAP, 14 sur y Av. San Claodio, Puebla, Puebla, 72570, Mexico
J. Mendoza-Alvarez: Depto. de Física, CINVESTAV-IPN, DF, 07000/Centro, Mexico
Surface Review and Letters (SRL), 2002, vol. 09, issue 05n06, 1645-1649
Abstract:
Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of3 × 1017– 2 × 1020cm-3are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets ofSb3Te2in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor,BE2, disappears.
Keywords: Ga1 - xInxAsySb1 - y; liquid phase epitaxy; doping; photoluminescence (search for similar items in EconPapers)
Date: 2002
References: Add references at CitEc
Citations:
Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X02004141
Access to full text is restricted to subscribers
Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.
Export reference: BibTeX
RIS (EndNote, ProCite, RefMan)
HTML/Text
Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:09:y:2002:i:05n06:n:s0218625x02004141
Ordering information: This journal article can be ordered from
DOI: 10.1142/S0218625X02004141
Access Statistics for this article
Surface Review and Letters (SRL) is currently edited by S Y Tong
More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().