 Statistical, simulation and modeling analysis of variability in memristors with single and bilayer dielectrics of HfO2 and Al2O3, a comparisonA. Cantudo, F. Jiménez-Molinos, P.Q. Ruiz, A. López, M.A. Villena, M.B. González, F. Campabadal and J.B. Roldán Chaos, Solitons & Fractals, 2025, vol. 196, issue C Abstract: Variability is a key aspect of memristors that hinders their usage in massive commercial applications. This study investigates the cycle-to-cycle variability of resistive switching devices fabricated using three different dielectric configurations: two monolayer insulators (Al2O3 or HfO2) or a HfO2/Al2O3 bilayer. Thousands of resistive switching (RS) current-voltage (I-V) curves were measured under ramped voltage stress and the RS parameters were extracted using different numerical methodologies. The variability of the obtained RS parameters was analyzed using the conventional 1D coefficient of variation (σ/μ, where σ stands for the standard deviation and μ for the mean), as well as a recently introduced 2D coefficient of variation, providing a deeper insight into the joined variability of the switching voltages and currents. Keywords: Memristors; Resistive memory; Resistive switching; Variability; Coefficient of variation; Statistical analysis; Compact modeling; Simulation (search for similar items in EconPapers) Downloads: (external link) Related works: Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text Persistent link: https://EconPapers.repec.org/RePEc:eee:chsofr:v:196:y:2025:i:c:s0960077925003650 DOI: 10.1016/j.chaos.2025.116352 Access Statistics for this article Chaos, Solitons & Fractals is currently edited by Stefano Boccaletti and Stelios Bekiros More articles in Chaos, Solitons & Fractals from Elsevier |
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