Domain Analysis and Magnetic Relaxation in Thin Films

Tatiana G. Rappoport (), F. S. de Menezes, L. C. Sampaio, M. P. Albuquerque and F. Mello
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Tatiana G. Rappoport: Instituto de Fisica, Universidade Federal Fluminense, Av. Litorânea s/n, 24210-340, Niterói, RJ, Brazil
F. S. de Menezes: Centro Brasileiro de Pesquisas Físicas, Rua Xavier Sigaurd 150, 22290-180, Rio de Janeiro, RJ, Brazil
L. C. Sampaio: Centro Brasileiro de Pesquisas Físicas, Rua Xavier Sigaurd 150, 22290-180, Rio de Janeiro, RJ, Brazil
M. P. Albuquerque: Centro Brasileiro de Pesquisas Físicas, Rua Xavier Sigaurd 150, 22290-180, Rio de Janeiro, RJ, Brazil
F. Mello: Centro Brasileiro de Pesquisas Físicas, Rua Xavier Sigaurd 150, 22290-180, Rio de Janeiro, RJ, Brazil

International Journal of Modern Physics C (IJMPC), 1998, vol. 09, issue 06, 821-825

Abstract: We have simulated the magnetic relaxation(M(t))and the nucleation of magnetic domains in the presence of magnetic field in thin films with anisotropy perpendicular to the film plane. We have used Monte Carlo simulations based on the two-dimensional classical Ising model including the long-range dipole–dipole and Zeeman interactions. Domains nucleated during the magnetic relaxation exhibit very rough interfaces. We analyze the roughness and theM(t)as a function of the relative strength of dipole–dipole and Zeeman terms.

Keywords: Magnetic Domains; Monte Carlo Simulation; Thin films (search for similar items in EconPapers)
Date: 1998
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DOI: 10.1142/S0129183198000753

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