Temperature effects on annealing crucial deep-level defects in neutron-irradiated silicon: Multiscale modeling

Jun Liu, Yonggang Li, Yang Gao, Chuanguo Zhang and Zhi Zeng
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Jun Liu: Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China†University of Science and Technology of China, Hefei 230026, P. R. China
Yonggang Li: Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China†University of Science and Technology of China, Hefei 230026, P. R. China
Yang Gao: Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China†University of Science and Technology of China, Hefei 230026, P. R. China
Chuanguo Zhang: Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China
Zhi Zeng: Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China†University of Science and Technology of China, Hefei 230026, P. R. China

International Journal of Modern Physics C (IJMPC), 2025, vol. 36, issue 02, 1-13

Abstract: Studying temperature effects on defect behaviors during thermal annealing is significant for understanding the performance degradation and recovery of semiconductor devices under irradiation. We systematically studied temperature effects on annealing crucial deep-level defects in neutron-irradiated silicon, by developing a multiscale modeling approach. The temperature-dependent concentrations and electron occupation ratios of crucial defects of divacancies (V2) and tri-vacancies (V3) were given for dynamic and post-irradiation annealing. Besides the common direct dissociation, we found a new approach to eliminating V2 and V3 by their recombination with interstitials dissociated from interstitial-relative defects at relatively low temperatures. To effectively eliminate V2 and V3 by post-irradiation annealing, we further determined the activation energies of 1.98eV and 1.71eV for V2 and V3, respectively. We also found that, within the operation temperature range of devices, the higher the temperature, the better the radiation resistance. It is thus recommended that the optimal temperature of post-irradiation annealing for device performance recovery is near 600K.

Keywords: Silicon; neutron irradiation; deep-level defects; thermal annealing; multiscale modeling (search for similar items in EconPapers)
Date: 2025
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DOI: 10.1142/S0129183124501857

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