Finite Element Method for Stress-Induced Voiding

Cher Ming Tan (), Zhenghao Gan (), Wei Li () and Yuejin Hou ()
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Cher Ming Tan: Nanyang Technological University
Zhenghao Gan: Semiconductor Manufacturing International (Shanghai) Corp.
Wei Li: Singapore Institute of Manufacturing Technology
Yuejin Hou: Nanyang Technological University

Chapter Chapter 5 in Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections, 2011, pp 113-130 from Springer

Abstract: Abstract With the basic physics of stress-induced voiding (SIV) introduced in Chap. 2, the detailed finite element modeling of the mechanisms of SIV in Cu interconnect will be described here. The understanding of the voiding mechanism through the modeling can certainly shed light on the future design and process improvement of the multilevel interconnect structures. The most widely used commercial finite element software for finite element analysis is ANSYS or ABAQUS.

Keywords: Stress Gradient; Hydrostatic Stress; Void Growth; Finite Element Method Model; Finite Element Method Simulation (search for similar items in EconPapers)
Date: 2011
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DOI: 10.1007/978-0-85729-310-7_5

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