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Development of Physics-Based Modeling for ULSI Interconnections Failure Mechanisms: Electromigration and Stress-Induced Voiding

Cher Ming Tan (), Zhenghao Gan (), Wei Li () and Yuejin Hou ()
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Cher Ming Tan: Nanyang Technological University
Zhenghao Gan: Semiconductor Manufacturing International (Shanghai) Corp.
Wei Li: Singapore Institute of Manufacturing Technology
Yuejin Hou: Nanyang Technological University

Chapter Chapter 2 in Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections, 2011, pp 5-38 from Springer

Abstract: Abstract In this chapter, we present a comprehensive review on the physics-based modeling of EM phenomena in ULSI interconnections over the last three decades. In the evolution of the physics-based modeling, some aspects of the physics are dropped for simplification, and some are added to accommodate new understanding on the EM physics as well as for the new development of the interconnect technology. With the continuous change in the metallization system and materials, the aspects of physics that have been dropped may become important again, and new physics might also occur with these changes in metallization system. Here, we re-examine the justification of dropping or adding various physical aspects in the EM modeling during their evolution and their implications on the future interconnect system.

Keywords: Vacancy Concentration; Phase Field Model; Metal Line; Atomic Flux; Void Surface (search for similar items in EconPapers)
Date: 2011
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Persistent link: https://EconPapers.repec.org/RePEc:spr:ssrchp:978-0-85729-310-7_2

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DOI: 10.1007/978-0-85729-310-7_2

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