Finite Element Method for Electromigration Study

Cher Ming Tan (), Zhenghao Gan (), Wei Li () and Yuejin Hou ()
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Cher Ming Tan: Nanyang Technological University
Zhenghao Gan: Semiconductor Manufacturing International (Shanghai) Corp.
Wei Li: Singapore Institute of Manufacturing Technology
Yuejin Hou: Nanyang Technological University

Chapter Chapter 4 in Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections, 2011, pp 73-112 from Springer

Abstract: Abstract In Chap. 3, we introduce the basic concept and the general theory of finite element method (FEM) for electrical, thermal, mechanical, and coupled-field multi-physics analysis. EM is a complicated physical and material phenomenon that involves the analysis of electro-thermo-mechanical-coupled field analysis and governed by various partial differential equations. FEM is able to solve the partial differential equation and handle complex geometries (and boundaries) with relative ease. Therefore, several EM studies employ the FEM for more complete investigation on different interconnect structures. In this chapter, we will provide an overview on the application of FEM for EM study.

Keywords: Hydrostatic Stress; Void Growth; Void Nucleation; Metal Line; Simulation Methodology (search for similar items in EconPapers)
Date: 2011
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Persistent link: https://EconPapers.repec.org/RePEc:spr:ssrchp:978-0-85729-310-7_4

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DOI: 10.1007/978-0-85729-310-7_4

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